Thin film tantalum oxide capacitor

Electricity: electrical systems and devices – Electrostatic capacitors – Fixed capacitor

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29 2542, 204 38A, H01G 110

Patent

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040890392

ABSTRACT:
A method of forming a thin film capacitor having a tantalum oxide dielectric is described. A dielectric substrate having a non-tantalum electrically conductive film electrode formed thereon is disposed within a vacuum environment. A film of tantalum oxide is applied over the conductive film within the vacuum environment. The composite is then removed from the vacuum environment and disposed within an anodizing bath wherein an electrical current is passed through the tantalum oxide film, the current being substantially constant until a predetermined desired voltage is reached. Thereafter, a second electrically conductive film electrode is disposed over the so-formed tantalum oxide film.

REFERENCES:
patent: 3231479 (1966-01-01), Gorton
patent: 3568014 (1971-03-01), Schuermeyer
patent: 4002542 (1977-01-01), Young
Dommer Fixed Capacitors, 2nd Edition, 1963, Pitman, London, pp. 204-205.

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