1975-12-15
1978-05-09
Miller, Jr., Stanley D.
357 39, 357 51, 357 55, 357 64, 357 86, H01L 2974
Patent
active
040890244
ABSTRACT:
A semiconductor switching device including at least three PN junctions and a control electrode formed on a portion of the surface of one outermost layer out of the layers constituting said PN junctions, wherein, in order to positively ensure that it turns off, the forward voltage drop across a current path including a portion of the outermost layer near the control electrode is made greater than that across the main current path.
REFERENCES:
patent: 3246172 (1966-04-01), Sanford
patent: 3284680 (1966-11-01), Gentry et al.
patent: 3681667 (1972-08-01), Kokosa
patent: 3967308 (1976-06-01), Yatsuo et al.
Clawson Jr. Joseph E.
Hitachi , Ltd.
Miller, Jr. Stanley D.
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