Two-phase charge-coupled semiconductor arrangement

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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357 59, 307221D, H01L 2978, H01L 2904, G11C 1928

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active

040890236

ABSTRACT:
A three-phase charge-coupled device comprising three successions of electrodes formed on an insulating layer covering one surface of a semiconductor substrate. In effect, this provides a linear array of closely spaced MOS (metal-oxide-semiconductor) capacitors. Each succession makes up one phase of the CCD. Thus, each third electrode in the linear array makes up one succession. The electrodes of two phases are interconnected by way of a conductor path to all of the electrodes of their respective group, but the electrodes of the third phase are coupled by a high resistance layer to the electrodes of the other two phases and to the substrate via the capacitance formed by each electrode of the third phase, the insulation layer and the substrate. One electrode of each succession forms a group below which an asymmetric potential well may be produced in the substrate.

REFERENCES:
patent: 3728590 (1973-04-01), Kim et al.
patent: 3735156 (1973-05-01), Krambeck et al.
patent: 3932882 (1976-01-01), Berger
Sequin "Experimental Investigation of a Linear 500-Element 3-Phase Charge-Coupled Device" Bell System Tech. Journal, vol. 53 (4/74) pp. 581-610.

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