Oriented ferroelectric thin-film element and manufacturing metho

Details Oriented ferroelectric thin-film element and manufacturing metho Oriented ferroelectric thin-film element and manufacturing metho

1994-05-27

1996-10-22

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257295, 257628, H01L 2904

Patent

active

055679790

ABSTRACT:
A buffer layer having crystal orientation in a (111) face is formed on a semiconductor single-crystal (100) substrate and a ferroelectric thin film having crystal orientation in a (111) or (0001) face is then formed over the buffer layer. The buffer layer is preferably formed of MgO at a temperature ranging from 20 to 600.degree. C. and at a rate ranging from 0.5 to 50 .ANG./sec. The thus formed ferroelectric thin film has its axes of polarization aligned in one direction. Using the oriented ferroelectric thin-film device, highly functional nonvolatile memories, capacitors or optical modulators can be fabricated on semiconductor substrates.

REFERENCES:
patent: 5308462 (1994-05-01), Iijima et al.
patent: 5323023 (1994-06-01), Fork
patent: 5331187 (1994-07-01), Ogawa
patent: 5347157 (1994-09-01), Hung et al.
patent: 5378905 (1995-01-01), Nakamura
patent: 5449933 (1995-09-01), Shindo et al.
J. Appl. Phys. 73(7), 1 Apr. 1993 "Growth and characterization of (111) and (001) oriented MgO films on (001) GaAs," Tarsa et al., pp. 3276-3283.
J. Appl. Phys. 69(12), 15 Jun. 1991 "Growth of ceramic thin films on Si (100) using an in situ laser deposition technique," Tiwari et al., pp. 8358-8362.

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