Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-06-07
1996-10-22
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 63, 257 72, 257291, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
055679560
ABSTRACT:
An information processing apparatus including a photoelectric conversion element having a photoelectric conversion section. The photoelectric conversion section has an insulating layer with first and second opposed surfaces, and a photoconductive semiconductor layer with first and second opposed surfaces and an intermediate region disposed therebetween, the second surface of the semiconductor layer being adjacent to the first surface of the insulating layer. The photoconductive semiconductor layer has a non-monocrystalline matrix of silicon atoms and including hydrogen atoms distributed nonuniformly. A concentration of the hydrogen atoms is greater near the first and second surfaces of the photoconductive semiconductor layer than in the intermediate region, so that an energy band gap width of the photoconductive semiconductor layer varies between the first and second surfaces of said photoconductive semiconductor layer. The photoelectric conversion section also has first and second electrodes electrically connected to the first surface of the photoconductive semiconductor layer, and a third electrode provided at the second surface of the insulating layer and opposite to a site between the first and second electrodes.
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Ishii Takayuki
Kobayashi Isao
Saika Toshihiro
Takeda Shinichi
Yamanobe Masato
Canon Kabushiki Kaisha
Ngo Ngan V.
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