Photoelectrochemical etching of n-type silicon

Details Photoelectrochemical etching of n-type silicon Photoelectrochemical etching of n-type silicon

1983-12-30

1984-11-13

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412975, 2041298, 20412985, 20412995, C25F 312, C25F 314

Patent

active

044824432

ABSTRACT:
Photoelectrochemical processing of semiconductors is highly desirable because of its versatility and simplicity. The invention is a photoelectrochemical etching procedure for n-type silicon in which an alcohol based solution of hydrofluoric acid is used as the electrolyte. This procedure is useful for the fabrication of a variety of silicon devices.

REFERENCES:
patent: 2861931 (1958-11-01), Faust, Jr.
patent: 3041258 (1962-06-01), Sikina
patent: 3079536 (1963-02-01), McLean
patent: 3527682 (1970-09-01), Valvo
patent: 4389291 (1983-06-01), Kohl
patent: 4399004 (1983-08-01), Buckley
patent: 4404072 (1983-09-01), Kohl
patent: 4415414 (1983-11-01), Burton et al.
"Photoetching of InP Mesas for Production of MM-Wave Transferred Oscillators", Electronics Letters, 13, D. Lubzens, pp. 171-172, (1977).

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