Method of making aluminum alloy film by implanting silicon ions

Details Method of making aluminum alloy film by implanting silicon ions Method of making aluminum alloy film by implanting silicon ions

1982-09-08

1984-11-13

Roy, Upendra

Metal treatment

Compositions

Heat treating

29576B, 357 65, 357 91, H01L 700, H01L 21265

Patent

active

044823940

ABSTRACT:
Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300.degree. to 500.degree. C. at which simultaneous annealing and diffusion take place to form the alloy.
An apparatus for performing the process comprises a vacuum chamber wherein implantation is effected, an ion gun and means including a deflection magnet slit for selecting a single ionic species for implantation.

REFERENCES:
patent: 3600797 (1971-08-01), Bower et al.
patent: 3740835 (1973-06-01), Duncan
patent: 3871067 (1975-03-01), Bogardus et al.
patent: 4135292 (1979-01-01), Jaffe et al.
patent: 4313768 (1982-02-01), Sanders et al.

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