1984-03-19
1987-01-13
Larkins, William D.
357 15, 357 51, 357 236, H01L 2348, H01L 2704
Patent
active
046368337
ABSTRACT:
A semiconductor device comprising a first electrode, a dielectric film and a second electrode which are stacked and formed on a semiconductor layer with the second electrode in contact with the semiconductor layer. A diode is formed of the second electrode and the semiconductor layer, and a capacitor is formed of the first electrode, the dielectric film and the second electrode.
REFERENCES:
patent: 4211941 (1980-07-01), Schade
patent: 4245231 (1981-01-01), Davies
patent: 4377029 (1983-03-01), Ozawa
IBM Tech. Disc. Bulletin, vol. 17, #6, pp. 1569-1570, Nov. 1974, by Arzubi.
Homma Noriyuki
Mukai Kiichiro
Nishioka Yasushiro
Sakuma Noriyuki
Hitachi , Ltd.
Larkins William D.
Prenty Mark
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