Patent
1986-03-04
1987-01-13
Larkins, William D.
357 71, 357 59, H01L 2314, H01L 2160
Patent
active
046368329
ABSTRACT:
A semiconductor device with a bonding section comprising a semiconductor substrate, a silicon layer formed on the semiconductor substrate with a first insulating layer interposed therebetween, and a bonding pad formed on the silicon layer with a second insulating layer interposed therebetween. The silicon layer has substantially the same size as the bonding pad. When a lead line is bonded to the bonding pad, the silicon layer lessens the stress caused by the bonding.
REFERENCES:
patent: 3519901 (1970-05-01), Bean et al.
patent: 3667008 (1972-05-01), Katnack
patent: 4005455 (1977-01-01), Watrous, Jr. et al.
patent: 4258382 (1981-03-01), Harris
patent: 4288256 (1981-09-01), Ning et al.
patent: 4291222 (1981-09-01), Clemens et al.
patent: 4291322 (1981-09-01), Clemens et al.
International Electron Devices Meeting, Technical Digest, Dec. 7th-9th, 1981, pp. 62-65, "A New Integration Technology that Enables Forming Bonding Pads on Active Areas".
"Aluminum-Silicon Conductor Formation"-Leff, IBM Technical Disclosure Bulletin, vol. 12, No. 11, Apr. 1970, p. 1996.
"Aluminum-Copper-Silicon Semiconductor Metallurgy"-Conrad, vol. 13, No. 12, May, 1971, IBM Technical Disclosure Bulletin, p. 3661.
Abe Masahiro
Ajima Takashi
Aoyama Masaharu
Yonezawa Toshio
Clark S. V.
Larkins William D.
Tokyo Shibaura Denki Kabushiki Kaisha
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