Voltage-controlled type semiconductor switching device

Details Voltage-controlled type semiconductor switching device Voltage-controlled type semiconductor switching device

1986-04-07

1987-01-13

Larkins, William D.

357 54, 357 49, 357 59, 357 64, 357 16, 357 42, 357 1, 357 231, 357 232, 357 233, 357 237, 357 2311, 357 2312, 357 4, H01L 2978

Patent

active

046368248

ABSTRACT:
A voltage-control type semiconductor switching device is disclosed which includes a pair of controlled electrodes to which a control voltage signal is supplied, and a semiconductive layer formed between the electrodes so as electrically insulative from the electrodes through insulative layers. The semiconductive layer has a channel region and a carrier-storage region which is substantially nonconductive. The channel region is formed laterally along the longitudinal direction of the electrodes, thereby allowing majority carriers such as electrons of the semiconductive layer to flow in the lateral direction. In the current cut-off mode, the carrier-storage region temporarily stores the carriers which move in the direction of thickness of the semiconductive layer due to the electric field created by the voltage. In the current conduction mode, the carrier-storage region releases the carriers stored therein toward the channel region.

REFERENCES:
patent: 2791758 (1957-05-01), Looney
patent: 2791759 (1957-05-01), Brown
patent: 2791760 (1957-05-01), Ross
patent: 2791761 (1957-05-01), Morton
patent: 2900531 (1959-08-01), Wallmark
patent: 2918628 (1959-12-01), Stvetler
patent: 2933619 (1960-04-01), Heywang
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3385729 (1968-05-01), Larchian
patent: 3607466 (1971-09-01), Miyazaki
patent: 3678302 (1972-07-01), Kasano et al.
patent: 3728592 (1973-04-01), Joshi et al.
patent: 4054989 (1977-10-01), Ho et al.
patent: 4094057 (1978-06-01), Bhattacharyya et al.
patent: 4229756 (1979-02-01), Sato et al.
patent: 4510516 (1985-04-01), Bartelink
patent: 4543592 (1985-09-01), Itsumi et al.
Sakai, "Velocity Modulation Transistor (VMT)--A New Field-Effect Transistor Concept," Japanese Journal of Applied Physics, vol. 21, No. 6, Jun. 1982, pp. L381-L383.
Japanese Journal of Applied Physics, vol. 20, No. 7 (Jul. 1981), "Polytype Superlattices and Multi-Heterojunctions," pp. L529-L532.

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