Method of making a stripe-geometry II/VI semiconductor gain-guid

Details Method of making a stripe-geometry II/VI semiconductor gain-guid Method of making a stripe-geometry II/VI semiconductor gain-guid

1995-06-06

1996-10-22

Kunemund, Robert

Fishing, trapping, and vermin destroying

437 20, 437 26, 437126, 437133, H01L 2120

Patent

active

055676464

ABSTRACT:
A blue, green or blue-green stripe-geometry II/VI semiconductor injection laser utilizing a Zn.sub.1-u Cd.sub.u Se active layer (quantum well) having Zn.sub.1-x Mg.sub.x S.sub.y Se.sub.1-y cladding layers and ZnS.sub.z Se.sub.1-z guiding layers is fabricated on a GaAs substrate. The stripe-geometry configuration is obtained by ion implanting a dopant such as Nitrogen or Oxygen into the structure to form blocking layer portions of higher resistivity in the second cladding layer and the second guiding layer. These blocking layer portions are positioned on both sides of, and thereby define, a stripe-shaped lateral confinement region of lower resistivity in the second cladding layer and the second cladding layer.

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