Method for fabricating T-shaped capacitors in DRAM cells

Details Method for fabricating T-shaped capacitors in DRAM cells Method for fabricating T-shaped capacitors in DRAM cells

1996-01-11

1996-10-22

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

055676405

ABSTRACT:
The present invention provides a method of manufacturing a T-shaped capacitor for a DRAM which uses one mask to define both the node contact hole and the bottom electrode. This novel one mask method uses an oxygen plasma treatment to enlarge a first opening (the node contact opening) in the resist layer to create a slightly larger second opening which defines the storage electrode. This method reduces the number of masking steps used and therefore reduces process costs and increases yields. The process comprises forming an insulation layer and a resist layer having a first opening over an active area. Next, the insulation layer is etched through the first opening forming a node contact hole extending partially through the insulation layer. The first opening is widened with an oxygen plasma etch to form a slightly larger second opening. Then, the insulation layer is etched through the second opening forming a storage electrode hole and the node contact hole is extended to expose the source. The resist layer is removed. A polysilicon layer is formed that completely fills the node contact hole and the storage electrode hole and covers the first insulation layer. The polysilicon layer covering the first insulation layer is removed thereby forming the T-shaped storage electrode. The first insulation layer is removed. A capacitor dielectric layer and a top electrode are formed over the T-shaped storage electrode thus completing the T-shaped capacitor.

REFERENCES:
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5286668 (1994-02-01), Chou
patent: 5346844 (1994-09-01), Cho et al.
patent: 5403766 (1995-04-01), Miyake
patent: 5432116 (1995-07-01), Keum et al.

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