Method of fabricating a micro-trench floating gate electrode for

Details Method of fabricating a micro-trench floating gate electrode for Method of fabricating a micro-trench floating gate electrode for

1995-07-05

1996-10-22

Tsai, H. Jey

Fishing, trapping, and vermin destroying

437977, H01L 21265

Patent

active

055676375

ABSTRACT:
There is provided a method of fabrication a storage capacitor. A bottom semiconductor film having an electrical conductivity if formed for subsequent formation of a phase splitting glass film on the bottom semiconductor film. The phase splitting glass film is subjected to a heat treatment to allow the phase splitting glass film to be split into at least two different glass films which have different components. The phase splitting glass film is subjected to an etching in which one of the glass films has a higher etching rate than an etching rate of another of the glass films so that the one glass film having the higher etching rate only is removed, while the another glass film remains thereby a mask pattern comprising the remaining another glass film is formed. The bottom semiconductor film is subjected to a dry etching using the mask to form trench grooves defined by trench pillars in the bottom semiconductor film. A dielectric film is formed on surfaces of the trench grooves and trench pillars. A top semiconductor film having an electrical conductivity is formed on the dielectric film.

REFERENCES:
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patent: 5215933 (1993-06-01), Araki
patent: 5225362 (1993-07-01), Bergemont
Inoue, N., et al., Extended abstract of the 1992 international conference on Solid State Device and Material "The Selective Growth of LPCVD-Si.sub.3 N.sub.4 on ", pp. 205-207.
Yugami, J., et al., Extended abstract of Solid State Device and Materials, 1988 Conference "Inter-Poly SiO.sub.2 /Si.sub.3 N.sub.4 Capacitor Films 5nm Thick for Deep Submicron LSIs", pp. 173-176.
Ando, K., et al., "Ultrathin Silicon Nitride Films Prepared by Combining Rapid Thermal Nitridation with Low-Pressure Chemical Vapor Deposition", Applied Physics Letters, vol. 59, No. 9, Aug. 26, 1991, pp. 1081-1083.
Kim, S., et al., "Characteristics of the NO Dielectric Film in the MTS (Micro-Trench Storage) Capacitor Structure", vol. 12, No. 11, 1992, pp. 126-131, publisher unknown.

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