NMOS source/drain doping with both P and As

Details NMOS source/drain doping with both P and As NMOS source/drain doping with both P and As

1988-03-09

1989-07-25

Roy, Upendra

Fishing, trapping, and vermin destroying

357 234, 357 91, 437 27, 437 30, 437 34, 437 44, H01L 21265, H01L 2978

Patent

active

048513601

ABSTRACT:
A process for forming N-channel MOS sources and drains, by implanting both phosphorus and arsenic. The high diffusivity of phosphorus causes it to diffuse in advance of the bulk of the arsenic, so that, after annealling, the source/drain regions have graded regions of gradually decreasing conductivity adjacent to the end of the channels. Thus the electric potential gradient at the ends of the channels is reduced, and impact ionization and hot carrier effects are avoided. The effective radius of the source (or drain) junction is increased, providing increased breakdown voltage.

REFERENCES:
patent: 4291321 (1981-09-01), Pfleiderer et al.
patent: 4369072 (1983-01-01), Bakeman, Jr. et al.
patent: 4589936 (1986-05-01), Komatsu
Ohta et al., IEEE-Trans. Electron Devices, ED-27, (1980), 1352.
Sunami et al. in 1981 Symp. on VLSI Technology, Dig. Tech. Papers, (9/1981), Hawaii, p. 20.
Takeda et al., Ibid, p. 22.
Yonezawa et al. in Semiconductor Silicon, (ed).
Huff et al., The Electrochem. Soc., Princeton, 1977, p. 658.

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