Method of making a mask for making integrated circuits

Details Method of making a mask for making integrated circuits Method of making a mask for making integrated circuits

1993-03-25

1996-10-22

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430322, 430323, 430311, 216 47, G03F 900

Patent

active

055675506

ABSTRACT:
A transistor device 10 is disclosed herein. A doped layer 14 of a radiation sensitive material is formed over a substrate 12. The radiation sensitive material 14 may be polyimide, polybenzimidazole, a polymer, an organic dielectrics, a conductor or a semiconductor and the substrate 12 may be silicon, quartz, gallium arsenide, glass, ceramic, metal or polyimide. A neutral (undoped) layer 16 of radiation sensitive material is formed over the doped layer 14. First and second source/drain regions 18 and 20 are formed in the neutral layer 16 and extend to a top portion of the doped layer 14. A gate region 22 is formed in a top portion of the neutral layer 16 between the first source/drain region 18 and second source/drain region 20 such that a channel region 24 is formed in the doped layer 14 beneath the gate region 22.

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patent: 5028354 (1991-07-01), Smith et al.
patent: 5272024 (1993-12-01), Tabuchi
"Variable-Resistivity Material for Memory Circuits," NASA's Jet Propulsion Laboratory, Pasadena, California, XP 000127995, p. 326. (Apr. 1990).
"Polymer Device Cited as Possible LED Substitute," Amal Kumar Naj, Wall Street Journal, Jun. 11, 1992.

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