Method of forming high pressure silicon oxynitride gate dielectr

Details Method of forming high pressure silicon oxynitride gate dielectr Method of forming high pressure silicon oxynitride gate dielectr

1995-06-06

1997-10-07

Fourson, George

Fishing, trapping, and vermin destroying

437242, 437240, 437 42, 437983, 148DIG118, 257410, H01L 2131

Patent

active

056747888

ABSTRACT:
A silicon oxynitride (oxynitride) dielectric layer is presented using a process in which nitrogen is incorporated into the dielectric as it is grown upon a silicon substrate. The oxynitride layer is grown at elevated temperature and pressure in an ambient containing N.sub.2 O and/or NO. A MOS gate dielectric is advantageously formed from the oxynitride dielectric layer with a sufficient nitrogen concentration near the interface between a boron-doped polysilicon gate electrode and the gate dielectric as to prevent boron atoms from penetrating into the gate dielectric. Further, the oxynitride layer contains a sufficient nitrogen concentration near the interface between the gate dielectric and a silicon substrate as to reduce the number of high-energy electrons injected into the gate dielectric which become trapped in the gate dielectric. Nitrogen atoms in the gate dielectric near the interface between the boron-doped polysilicon gate electrode and the gate dielectric physically block boron atoms, preventing them from penetrating into the gate dielectric. Nitrogen atoms and silicon atoms form strong Si--N bonds at the interface between the gate dielectric and the silicon substrate, helping ensure injected electrons are not easily trapped in the oxynitride dielectric layer.

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