Process for plasma enhanced anneal of titanium nitride

Details Process for plasma enhanced anneal of titanium nitride Process for plasma enhanced anneal of titanium nitride

1995-06-05

1996-10-22

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Pretreatment of substrate or post-treatment of coated substrate

4272481, 427294, 427569, H05H 100

Patent

active

055674836

ABSTRACT:
A titanium nitride film is annealed at a temperature less than 500.degree. C. by subjecting said titanium nitride film to an RF created plasma generated from a nitrogen-containing gas in a rotating susceptor reactor. The formed film is comparable to a thin film annealed at significantly higher temperatures, making this process useful for integrated circuits containing aluminum elements.

REFERENCES:
patent: 4701349 (1987-10-01), Koyanagi et al.
patent: 4792378 (1988-12-01), Rose et al.
patent: 4897709 (1990-01-01), Yokoyama et al.
patent: 4987102 (1991-01-01), Nguyen et al.
patent: 5052339 (1991-10-01), Vakerlis et al.
patent: 5246881 (1993-09-01), Sandhu et al.
patent: 5296404 (1994-03-01), Akahori et al.
patent: 5342652 (1994-08-01), Foster et al.
patent: 5356476 (1994-10-01), Foster et al.
patent: 5370739 (1994-12-01), Foster et al.
patent: 5378501 (1995-01-01), Foster et al.
patent: 5416045 (1995-05-01), Kauffman et al.
patent: 5434110 (1995-07-01), Foster et al.
patent: 5443647 (1995-08-01), Aucoin et al.
Hilton, M. R., et al., Composition, Morphology and Mechanical Properties of Plasma-Assisted Chemically Vapor-Deposited TiN Films on M2 Tool Steel, Thin Solid Films, 139 (1986) pp. 247-260. (No month available).

Affiliated with

Also associated with

Rating

Process for plasma enhanced anneal of titanium nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for plasma enhanced anneal of titanium nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for plasma enhanced anneal of titanium nitride will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2356967