Method of making an improved MESFET semiconductor device

Details Method of making an improved MESFET semiconductor device Method of making an improved MESFET semiconductor device

1982-01-15

1984-11-13

Ozaki, G.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29577C, 148 15, 148187, H01L 21265

Patent

active

044817045

ABSTRACT:
An improved MESFET integrated circuit device with a metal-semiconductor diode as the control element and a source and drain as other device elements is fabricated using a self-aligned gate process which consists of an implanted channel stopper underneath a thick field oxide, depletion and enhancement mode device channel implants, implanted source and drain regions, selective oxidation to form self-aligned gates, metal-semiconductor junctions as control elements, barrier metal and a thin film metallization system. The process and device structure are suited for high packing density, very low speed power product and ease of fabrication making it attractive for digital applications.

REFERENCES:
patent: 3907616 (1975-09-01), Wiemer
patent: 4052229 (1977-10-01), Pashley
patent: 4055444 (1977-10-01), Rao
patent: 4139786 (1979-02-01), Raymond et al.
patent: 4201997 (1980-05-01), Darley et al.
patent: 4202003 (1980-05-01), Darley et al.
patent: 4290184 (1921-09-01), Kuo

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