Nanolithographic method of forming fine lines

Details Nanolithographic method of forming fine lines Nanolithographic method of forming fine lines

1995-03-16

1997-10-07

Tung, T.

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

1566431, 1566461, 15665911, 216 12, 216 49, 216 51, 216 58, 216 67, 216 74, H01L 21027

Patent

active

056744099

ABSTRACT:
A nanolithographic method for forming fine features is disclosed. A carrier layer, such as a photoresist, is deposited on a substrate. A relatively large pattern is imposed on the carrier layer by means of conventional photolithographic methods. The carrier layer is then exposed to a maskless etch, such as by ashing in oxygen, such that non-volatile materials within the carrier layer aggregate along the center line of the pattern, forming a residual pattern of significantly reduced width when compared to the original carrier layer pattern.

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J. C. Carls, et al., "Deep Ultraviolet Photoresist Based on Tungsten Polyoxometalates and Poly(Vinyl Alcohol) for Bilayer Photolithography" J. Electrochem. Society, V. 139, No. 3, pp. 786-793, Mar., 1992.

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