Structure for a substrate tap in a bipolar structure

Details Structure for a substrate tap in a bipolar structure Structure for a substrate tap in a bipolar structure

1990-12-28

1992-04-14

James, Andrew J.

357 71, 357 47, 357 34, H01L 2704, H01L 2712

Patent

active

051052539

ABSTRACT:
A substrate tap is incorporated in an integrated circuit which comprises a plurality of transistors formed in isolated device regions in a substrate material comprising a layer of N-type material over a layer of P-type material. The isolated device regions are defined by isolating slots extending down through said N-type material and into the P-type material. The trench for each substrate tap extend down to said P-type material and has an oxide layer lining the sidewalls of trench, a doped polysilicon layer covering the sides and bottom of said trench, and a doped implant or diffused region formed at the base of and in contact between the tap and the substrate. The substrate beneath the devices is connected to a negative potential to isolate the devices on said substrate. Preferably, the substrate tap includes a silicide layer formed over said polysilicon layer to enhance contact to said doped implant region.

REFERENCES:
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patent: 4727046 (1988-02-01), Tuntasood
patent: 4741802 (1988-05-01), Okumura
patent: 4819052 (1989-04-01), Hutter
patent: 4819054 (1989-04-01), Kawaji et al.
patent: 4924284 (1990-05-01), Beyer et al.
"Process for Simultaneously Forming Poly/Epi Silicon Filled Deep and Shallow Isolation Trenches having a CVD Oxide Cap", IBM TDB, vol. 33, No. 7, Dec./1990, pp. 388-392.

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