Radiation-sensitive semiconductor device having a transistor

Details Radiation-sensitive semiconductor device having a transistor Radiation-sensitive semiconductor device having a transistor

Filed on

1991-08-09

Date issued

1992-04-14

Examiner

Prenty, Mark

Other Related Categories

357 34, 357 45, 357 46, H01L 2714, H01L 2972, H01L 2710, H01L 2702

Type

Patent

Status

active

Patent number

051052490

Description

ABSTRACT:
The invention relates to a semiconductor device comprising a radiation-sensitive element (A . . . D). The radiation-sensitive element includes a transistor (T) having an emitter region (6), a base region (4) and a collector region (2), and further a radiation-sensitive region (7) having a rectifying junction (5). Due to the presence of the transistor (T), such an element (A . . . D) can supply a considerably larger output signal than a photodiode. On the contrary, however, the first-mentioned element (A . . . D) is comparatively slow as compared with a photodiode due to the parasitic capacitance of the rectifying junction (5). The invention obviates this disadvantage in that according to the invention the radiation-sensitive region (7) has at least a first subregion (71) and a second subregion (72) and the transistor (T) is subdivided into two subtransistors (T.sub.1, T.sub.2), whose base regions (4) are separately connected to the subregions (71, 72). The collector regions (2) and the emitter regions (6) of the subtransistors (T.sub.1, T.sub.2) are interconnected.

REFERENCES:
patent: 3693029 (1972-09-01), Niven, Jr.
patent: 3925879 (1975-12-01), Weinstein
patent: 4137428 (1979-01-01), Federico
patent: 4456920 (1984-06-01), Iesaka
patent: 4469945 (1984-09-01), Hoeberechts et al.
patent: 4810871 (1989-03-01), Opheij
patent: 4905069 (1990-02-01), Shigekane
Sze, "Physics of Semiconductor Devices", pp. 783-787, .COPYRGT.1981.

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