Quantum field effect device with source extension region formed

Details Quantum field effect device with source extension region formed Quantum field effect device with source extension region formed

1990-08-03

1992-04-14

Hille, Rolf

357 12, 357 238, 357 239, H01L 2978

Patent

active

051052474

ABSTRACT:
Semiconductor devices having at least three terminals and a single PN junction using quantum-effect tunneling for the primary conduction modes, including gates 32 and 34, drains 28 and 30, and sources 24 and 26, with the capability of operation in a unidirectional mode with implicit well taps or in bidirectional mode for pass gates.

REFERENCES:
patent: 4799090 (1989-01-01), Nishizawa
patent: 4814839 (1989-03-01), Nishizawa et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 7, Dec. 1973, "Field Induced Tunnel Diode", by Fischer, p. 2303.
Bate, "The Quantum Effect Device: Tomorrow's Transistor?", Scientific American, Mar. 16, 1988, pp. 96-100.
Sze, S. M., "Physics of Semiconductor Devices, Second Edition", John Wiley and Sons, 1981, pp. 97-98, 340, 402-407, 558-565.

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