Gate turn-off power semiconductor component

Details Gate turn-off power semiconductor component Gate turn-off power semiconductor component

1991-06-11

1992-04-14

Wojciechowicz, Edward J.

357 38, 357 39, 357 40, 357 43, H01L 2910

Patent

active

051052440

ABSTRACT:
In a MOS-controlled thyristor MCT, the second base layer (16) is pulled to the cathode-side surface of the semiconductor substrate (1) between the MCT until cells. At this point, a collector zone (20), which is doped oppositely to the second base layer (16) is arranged which is connected to the cathode contact (2) and reaches into the second base layer (16). Together with the second base layer (16) and an additional opposite anode short circuit, the collector zone (20) forms an inverse diode structure (11) which saves an external free-wheeling diode when inductive loads are switched.

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