Field effect transistor

Details Field effect transistor Field effect transistor

1991-06-26

1992-04-14

Wojciechowicz, Edward J.

357 16, 357 15, 357 61, 357 89, H01L 2980

Patent

active

051052415

ABSTRACT:
In a filed effect transistor utilizing two-dimensional electron gas as an active layer, an improvement to increase sheet electron density in a cap layer has been made by inserting into the cap layer at an interface with a carrier supplying layer, a thin film comprising a material having an electron affinity larger than that of a material constituting the cap layer. Further by employing a non-doped material for this thin film layer, electron mobility in the cap layer can also be improved. Thus source resistance of the field effect transistor has been reduced.

REFERENCES:
patent: 4987462 (1991-01-01), Kim et al.
Henderson et al., "Microwave Performance of a Quarter-Micrometer Gate Low-Noise Pseudomorphic . . . Transistor," IEEE Electron Device Letters, vol. EDL-7, No. 12, Dec. 1986.

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