Semiconductor integrated circuit having light emitting MOS devic

Details Semiconductor integrated circuit having light emitting MOS devic Semiconductor integrated circuit having light emitting MOS devic

1990-12-19

1992-04-14

Mintel, William

357 234, 357 19, 357 239, 357 231, H01L 3300

Patent

active

051052350

ABSTRACT:
The light emitting device has a series circuit comprised of a MOS transistor and a P.sup.+ N.sup.+ junction. When a voltage greater than the breakdown voltage of the P.sup.+ N.sup.+ junction is applied to this series circuit, as well as putting the MOS transistor into a conductive state, the P.sup.+ N.sup.+ junction breaks down allowing a break-down current to flow, and weak light is generated from the P.sup.+ N.sup.+ junction. Since this light emitting device can be produced in nearly the same size as an MOS transistor, using a conventional CMOS technique, it can be integrated into a chip with a high integration level, and the integration of the light emitting device causes almost no drop in the integration level. When this light emitting device is integrated in a semiconductor integrated circuit, the state of the circuit can be easily monitored by observing the light pattern of the device.

REFERENCES:
patent: 4374391 (1983-02-01), Camlibel et al.
patent: 4766472 (1988-08-01), Brillouet et al.
patent: 4877299 (1989-10-01), Lorenzo et al.
patent: 4920387 (1990-04-01), Takasu et al.

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