High current-gain PNP transistor

Details High current-gain PNP transistor High current-gain PNP transistor

1989-02-15

1990-05-08

Edlow, Martin H.

357 52, 357 53, 357 35, H01L 2348

Patent

active

049242881

ABSTRACT:
A high current gain high-frequency planar process PNP transistor comprising an emitter region and a surrounding annular collector. The surface of the transistor is covered with an insulative oxide layer, with an aperture to the emitter region. An overlaying metal layer is provided which substantially covers the base region between the emitter and collector. Connection to the emitter region is provided with an extension of the metal surface to the aperture. However except for this connection, the surface area above the emitter region is not covered by the metal layer. The resulting transistor provides a high-frequency PNP transistor with significantly enhanced Beta.

REFERENCES:
patent: 3846821 (1974-11-01), Nagata
patent: 4005451 (1977-01-01), Martinelli et al.
patent: 4205333 (1980-05-01), Yamamoto
IBM Tech. Discl. Bull., vol. 19, No. 2, Jul. 1976, p. 478, Article by Jambotkar.
IBM Tech. Disclosure, "Spaced . . . Voltage", C. G. Jambotkar, vol. 19, No. 2, Jul. 1976, pp. 478-479.

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