Method of trench filling

Details Method of trench filling Method of trench filling

1988-01-20

1990-05-08

Mintel, William

357 236, 357 54, 357 59, 357 86, 357 68, 357 47, 357 51, H01L 2712

Patent

active

049242849

ABSTRACT:
A method of simultaneously producing doped silicon filled trenches in areas where a substrate contact is to be produced and trench isolation in other areas. Borosilicate glass lines the sidewalls of those trenches where a contact is desired and undoped epitaxially grown silicon fills all the trenches. Subsequent heat processing causes the boron in the borosilicate to dope the epitaxial silicon in those trenches. In the other trenches, the silicon fill remains undoped except at the bottom where a channel stop exists, thereby forming isolation trenches. The contacts formed over the trenches may be formed by selectively deposition of a highly doped silicon into an opening that overlies a portion of the trench and the adjacent substrate surface.

REFERENCES:
patent: 4688063 (1987-08-01), Lu et al.
patent: 4801989 (1989-01-01), Taguchi
patent: 4803535 (1989-02-01), Taguchi
No Author, "Dynamic RAM Cell with Merged Drain and Storage", IBM Technical Disclosure Bulletin, vol. 27, No. 11, Apr., 1985, 6694-6697.

Affiliated with

Also associated with

Rating

Method of trench filling does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of trench filling, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of trench filling will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2352855