1984-05-10
1990-05-08
James, Andrew J.
357 2, 357 4, 357 234, H01L 2978
Patent
active
049242792
ABSTRACT:
According to the present invention, a thin film transistor of a vertical type in which an electric current flows in a vertical direction not parallel to a base plate surface. A high resistance semiconductor thin film, a gate insulated film and gate electrode are sequentially shaped on a side surface of drain and source main electrodes stacked as multi-layers via an insulated film, whereby a channel length L is determined by a thickness of said insulated film.
REFERENCES:
patent: 3493812 (1970-02-01), Weimer
patent: 4547789 (1985-10-01), Cannella
IBM Technical Disclosure Bulletin, vol. 11 #3, Aug. 1968, by Drangeid, pp. 332, 333.
Adams Bruce L.
James Andrew J.
Prenty Mark
Seiko Instruments Inc.
Wilks Van C.
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