Stress sensor diaphragms over recessed substrates

Details Stress sensor diaphragms over recessed substrates Stress sensor diaphragms over recessed substrates

1974-09-06

1976-11-23

James, Andrew J.

73 885SD, H01L 2984, H01L 2996, G01B 716, G01N 300

Patent

active

039940098

ABSTRACT:
A semiconductor layer to serve as a diaphragm is provided over a substrate having recesses therein. The recesses are formed after the semiconductor layer has been provided by differential etching. A convenient semiconductor layer is an epitaxially grown layer in which sensing elements are provided.

REFERENCES:
patent: 3215568 (1965-11-01), Pfann
patent: 3537319 (1970-11-01), Yerman
patent: 3614678 (1971-10-01), Engeler
patent: 3739315 (1973-06-01), Kurtz
patent: 3757414 (1973-09-01), Keller
patent: 3758830 (1973-09-01), Jackson
patent: 3764950 (1973-10-01), Willia

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