Fishing – trapping – and vermin destroying
Patent
1994-11-04
1996-01-02
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 41, 437915, H01L 21265, H01L 2144, H01L 2148
Patent
active
054808383
ABSTRACT:
A semiconductor device allowing control of its threshold voltage without requiring change in the materials of its gate electrodes and suitable for high density integration is disclosed. The semiconductor device includes a p type monocrystalline silicon substrate 1 having a cylindrical portion with inner and outer surfaces and extending in a vertical direction. A first gate electrode 8 and a second gate electrode 10 are disposed at the inner surface and the outer surface of the cylindrical portion 2, respectively. A source/drain region 5 is formed on the top end of the cylindrical portion 2, while a source/drain region 3 is formed on the inner bottom surface of the cylindrical portion 2. Therefore, the cylindrical portion 2 can be utilized as a channel region of an MIS field effect transistor. The threshold voltage of the transistor can easily be controlled by applying separate voltages to the two gate electrodes, the first electrode and the second electrode.
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Chaudhuri Olik
Dutton Brian K.
Mitsubishi Denki & Kabushiki Kaisha
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