Semiconductor laser having a doped surface zone

Details Semiconductor laser having a doped surface zone Semiconductor laser having a doped surface zone

1981-06-10

1984-01-31

Davie, James W.

Coherent light generators

Particular active media

Semiconductor

357 17, 372 46, H01S 319

Patent

active

044293968

ABSTRACT:
A semiconductor laser with a double hetero junction includes a strip-shaped semiconductor contact layer which is present on a passive layer of the same conductivity type, with a highly doped zone of the same conductivity type which extends over at least a part of the thickness of the contact layer and beside the contact layer in the passive layer so as to increase the radiation mode stability. According to the invention, the highly doped zone extends only over a part of the thickness of the passive layer in such a manner that below and beside the contact layer a difference in effective refractive index of at least 0.0005 and at most 0.005 is obtained.

REFERENCES:
patent: 4122410 (1978-10-01), Kressel et al.
patent: 4190809 (1980-02-01), Goodman et al.

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