IC which eliminates support bias influence on dielectrically iso

Fishing – trapping – and vermin destroying

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437 38, 437 62, 437 90, 437165, H01L 21223, H01L 21265, H01L 2176, H01L 2195

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active

049238205

ABSTRACT:
In integrated circuits having device island separated laterally by support of polycrystalline regions and a dielectric layer, a shield layer is provided along the side walls at the dielectric layer having an impurity concentration sufficiently greater than the island's impurity concentration to eliminate support bias influence without seriously affecting the PN junction in the island. The shield impurity concentration is less than the region forming a PN junction with the island and preferably is below 1.times.10.sup.13 ions/cm.sup.2 and a peak impurity concentration less than 5.times.10.sup.16 ions/cm.sup.3.

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