Method of forming bipolar transistor with integral base emitter

Details Method of forming bipolar transistor with integral base emitter Method of forming bipolar transistor with integral base emitter

1990-03-20

1992-04-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 51, 437 55, 437 60, 437186, 437 59, 148DIG9, 307446, H01L 21265

Patent

active

051048175

ABSTRACT:
The described embodiments of the present invention provide a bipolar transistor using an integrated field effect load device with one end of the load device integrally formed with the base of the transistor. The gate of the load device is connected to the emitter of the transistor. This structure is particularly advantageous in bipolar-complementary metal oxide semiconductor (BiCMOS) integrated circuitry. The unconnected end of the load device may be connected to the emitter using standard metal interconnection techniques or local interconnection techniques. In an additional embodiment of the invention, the end of the load device not connected to the base may be left unisolated to the substrate and thus connected to ground. It often occurs that the emitter of the bipolar transistor will be connected to ground and thus an automatic connection of the load device between the base and the emitter can be realized. In addition, by removing the isolation, the integrated circuit area required for the isolation may be saved.

REFERENCES:
patent: 4255671 (1981-03-01), Nonaka et al.
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4786961 (1988-11-01), Avery
patent: 4868135 (1989-09-01), Ogura et al.
patent: 4954865 (1990-09-01), Rokos
patent: 5001074 (1991-03-01), Arnborg
patent: 5031020 (1991-07-01), Momose

Affiliated with

Also associated with

Rating

Method of forming bipolar transistor with integral base emitter does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming bipolar transistor with integral base emitter , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming bipolar transistor with integral base emitter will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2348915