Photosensor

Details Photosensor Photosensor

1980-11-14

1984-01-31

Edlow, Martin H.

357 16, 357 30, H01L 2714

Patent

active

044293259

ABSTRACT:
In a photosensor having a metal electrode, at least one photoelectric conversion layer which overlies the metal electrode, and a transparent or partly transparent conductive layer which overlies the photoelectric conversion layer, a recombination layer for recombining electrons and holes is disposed between the metal electrode and the photoelectric conversion layer. By disposing the recombination layer, the metal electrode having an insulating oxide film on its surface can be handled as if the insulating oxide film were not existent. The dark current is suppressed, and the photo-response is made good. As the materials of the recombination layer, Sb.sub.2 S.sub.3, As.sub.2 Se.sub.3, As.sub.2 S.sub.3, Sb.sub.2 Se.sub.3 etc. are typical.

REFERENCES:
patent: 4007473 (1977-02-01), Nonaka
patent: 4236829 (1980-12-01), Chikamura
patent: 4360821 (1982-11-01), Tsukada

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