Zener diode and method of making the same

Details Zener diode and method of making the same Zener diode and method of making the same

1981-07-20

1984-01-31

James, Andrew J.

357 52, 357 89, H01L 2990, H01L 2934

Patent

active

044293240

ABSTRACT:
The present invention provides an improved Zener diode structure which avoids adverse structure causing leakage current or short circuits, for example. The pn junction is formed on a region of a first conductivity material below a window on the surface of the material. A second conductivity material fills the window to form the pn junction, and forms a sub-region at least at the edges of the window and extending substantially below the pn junction to maintain the pn junction far from the edges of the window.

REFERENCES:
patent: 3417299 (1968-12-01), Dixon et al.
patent: 3612959 (1971-10-01), Simon
patent: 4030117 (1977-06-01), Kling

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