Method of manufacturing semiconductor device having a capacitor

Details Method of manufacturing semiconductor device having a capacitor Method of manufacturing semiconductor device having a capacitor

1995-02-03

1996-01-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 60, 437919, H01L 2170, H01L 2700

Patent

active

054808260

ABSTRACT:
A semiconductor device includes a capacitor, of which insulator has an improved durability. In the semiconductor device, a capacitor lower electrode 11 of the cylindrical capacitor includes a standing wall portion 11b, which is formed of a polysilicon layer having a large crystal grain diameter (1000 .ANG.-10000 .ANG.).

REFERENCES:
patent: 4931897 (1990-06-01), Tsukamoto et al.
patent: 5061650 (1991-10-01), Deanison et al.
patent: 5091761 (1992-02-01), Hiraiwa et al.
patent: 5266514 (1993-11-01), Tuan et al.
IBM Technical Disclosure Bulletin, "High-density, Fold DRAM cell" vol. 23, No. 9B, Feb. 1990 pp. 378-381.
Kega et al "Crown-shaped Stacked Capacitor Cell for 1.5 v operation 64Mb DRAMS" IEEE Trans. on Electron Device, vol. 38, No. 2, Feb. 1991, pp. 255-261.
Inoue et al, "A New stacked capacitor cell with thin Box Structured Storage Node", Extended Abstract of 21st Conf. on Solid State Devices and Materials, Tokyo, 1989, pp. 141-144.

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