Method of making high density ROM, without using a code implant

Details Method of making high density ROM, without using a code implant Method of making high density ROM, without using a code implant

1995-01-19

1996-01-02

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437 69, 437203, H01L 218246

Patent

active

054808235

ABSTRACT:
A method of fabricating read only memory, (ROM), devices has been developed. This process is accomplished using self-alignment of buried N+ bit lines. Thick field oxides are used for isolation purposes. The programmable cell is obtained by growing a gate oxide in a region in which the thick field oxide has been removed. The non-programmable cells contain thick gate oxides. Polysilicon gate structures are processed to function as the word lines.

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