Method of low encroachment oxide isolation of a semiconductor de

Details Method of low encroachment oxide isolation of a semiconductor de Method of low encroachment oxide isolation of a semiconductor de

1984-08-20

1987-01-13

Smith, John D.

Metal working

Method of mechanical manufacture

Assembling or joining

427 85, 427 93, H01L 2176

Patent

active

046353445

ABSTRACT:
A low temperature, low encroachment isolation technique using differential oxidation results in an isolated semiconductor body having an N+ substrate (12) and an N epi layer (14) forming a mesa. N+ implants (22a) and (22b) are implanted on opposite sides of the mesa. Oxide is grown over the surface of the device with differential oxidation thus resulting in thick regions (24) over the N+ dopant regions and a thin region (26) over the undopant mesa region.

REFERENCES:
patent: 3899372 (1975-08-01), Esch et al.
patent: 4056825 (1977-11-01), Esch
patent: 4178396 (1979-12-01), Okano et al.
G. C. Feth et al, "Thin-Base Lateral pnp Transistor Structure", IBM Tech. Disclosure Bul. vol. 22, No. 7, 12/79.

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