PN Or PIN junction type semiconductor photoelectric conversion d

Details PN Or PIN junction type semiconductor photoelectric conversion d PN Or PIN junction type semiconductor photoelectric conversion d

1980-08-12

1983-06-07

Edlow, Martin H.

357 61, 357 63, H01L 2714, H01L 29161, H01L 29167

Patent

active

043873871

ABSTRACT:
A PN or PIN junction type semiconductor photoelectric conversion device which comprises a semiconductor layer having formed therein at least one PN or PIN junction, a light-transparent, conductive layer disposed on the semiconductor layer and a conductive layer disposed on the semiconductor layer on the opposite side from the light-transparent, conductive layer, and in which light is incident to the semiconductor layer from the outside of the light-transparent, conductive layer, a photoelectric conversion function is obtained by the presence of the barrier of the PN or PIN junction formed in the semiconductor layer.
In such a PN or PIN junction type semiconductor photoelectric conversion device, a light-transparent, current-permeable nitride layer is artificially formed between the semiconductor layer and the light-transparent, conductive layer. The light-transparent, current-permeable nitride layer is a conductive, insulating or semi-insulating layer. The conductive nitride layer is made of a conductive metal nitride. The insulating nitride layer is made of a silicon nitride. The semi-insulating nitride layer is made of a silicon nitride and a conductive metal nitride.

REFERENCES:
patent: 4139858 (1979-02-01), Pankove
patent: 4162505 (1979-07-01), Hanak
patent: 4167015 (1979-09-01), Hanak
patent: 4177474 (1979-12-01), Ovshinsky
patent: 4281208 (1981-07-01), Kuwano et al.

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