1983-06-02
1986-02-04
Davie, James W.
357 16, H01L 2714, H01L 3100
Patent
active
045689598
ABSTRACT:
A semiconductor structure is provided with progressively changing band gap in a plurality of stages each at an abrupt interface with an asymmetry in the band gap widths such that the major difference in energy gap discontinuity is in the band favoring a particular type of carrier. The transition regions between the progressive material sections are smaller than the carrier mean free path so as to provide kinetic energy for efficient carrier multiplication with reduced noise as the carriers traverse through the device.
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patent: 3889284 (1975-06-01), Schiel
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patent: 4250515 (1981-02-01), Esaki et al.
patent: 4250516 (1981-02-01), Worlock
Chang Leroy L.
Fang Frank F.
Davie James W.
Epps Georgia Y.
International Business Machines - Corporation
Riddles Alvin J.
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