Fluent material handling – with receiver or receiver coacting mea – Processes – Gas or variation of gaseous condition in receiver
Patent
1988-03-25
1990-05-08
Cusick, Ernest G.
Fluent material handling, with receiver or receiver coacting mea
Processes
Gas or variation of gaseous condition in receiver
141 1, 141 5, 141 7, 141 11, 141 12, 141 59, 141 71, 141 82, B67D 537, G02F 900
Patent
active
049229729
ABSTRACT:
A method of filling a liquid crystal device including a pair of parallel substrates having external surfaces with a liquid crystal material is set forth. The liquid crystal device is filled by disposing the liquid crystal device in a vacuum chamber between a pair of opposed parallel plates, evacuating the vacuum chamber, supplying the liquid crystal material to an inlet of the device, elevating the pressure in the chamber to allow the liquid crystal material to enter a space formed between the parallel substrates through the inlet by virtue of a differential pressure between the inside and the outside of the liquid crystal device, and applying opposed pressure with the parallel plates to the external surfaces of the parallel substrates respectively in order to form a uniform liquid crystal device. With the external pressure being applied to compensate for the expansion of the liquid crystal device during the elevation of the pressure within the vacuum chamber.
REFERENCES:
patent: 3701368 (1972-10-01), Stern
patent: 4064919 (1977-12-01), Stern et al.
patent: 4091847 (1978-05-01), Sorkin
patent: 4098301 (1978-07-01), Bloom et al.
patent: 4626303 (1986-12-01), Ogura
patent: 4753276 (1988-06-01), Inaba et al.
Mase Akira
Osabe Akio
Sakayori Hiroyuki
Sato Masahiko
Tabata Kaoru
Cusick Ernest G.
Semiconductor Energy Laboratory Co,. Ltd.
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