Tungsten silicide (WSi.sub.x) deposition process for semiconduct

Details Tungsten silicide (WSi.sub.x) deposition process for semiconduct Tungsten silicide (WSi.sub.x) deposition process for semiconduct

1992-01-15

1993-07-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437190, 148DIG19, 148DIG27, 148DIG147, H01L 2144

Patent

active

052310566

ABSTRACT:
A semiconductor manufacturing process for depositing a tungsten silicide film on a substrate includes deposition of a tungsten silicide nucleation layer on the substrate using a (CVD) process with a silane source gas followed by deposition of the tungsten silicide film with a dichlorosilane source gas. This two step process allows dichlorosilane to be used as a silicon source gas for depositing a tungsten silicide film at a lower temperature than would otherwise by possible and without plasma enhancement. Tungsten silicide films deposited by this process are characterized by low impurities, good step coverage, and low stress with the silicon substrate.

REFERENCES:
patent: 4684542 (1987-08-01), Jasinski et al.
patent: 4851295 (1989-07-01), Brors
patent: 4902645 (1990-02-01), Ohba
patent: 4966869 (1990-10-01), Hillman et al.
Properties of WSi.sub.x using dichlorosilane in a single-wax system, T. H. Tom Wu, Richard S. Rosler, Bruce C. Lamartine, Richard B. Gregory, and Harland G. Tompkins; accepted Jul. 14, 1988; American Vacuum Society 1988.

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