Method of forming conductive material selectively

Details Method of forming conductive material selectively Method of forming conductive material selectively

1990-12-03

1993-07-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437194, 437195, H01L 2244

Patent

active

052310540

ABSTRACT:
The CVD W deposition process is observed while changing the substrate temperature, with IR thermometer measurement. The temperature indicated changes with emissivity depending on the surface morphology and materials.
As the response time of this measurement is short, it is possible to perform in situ observation of changing surface morphology. This is a valid method to evaluate the deposition process. On a silicon substrate, the indicated temperature increases rapidly as soon as the gas flow starts, i.e. as soon as tungsten is deposited on the substrate. The indicated temperature increases in two steps. One is for silicon reduction and the other is for hydrogen reduction. Furthermore, it is found that the start of deposition on insulators is delayed. This phenomenon is related to the selective deposition. The thickness of deposited tungsten films can on insulatars be estimated by measuring the delay time and the thickness of tungsten on silicon.
The reaction process for silicon and hydrogen reduction is evaluated by this method. We found that within 10 seconds the silicon reduction was finished and the hydrogen reduction started. We also found that optimum silicon reduction enhances the selectivity.

REFERENCES:
patent: 4746621 (1988-05-01), Thomas et al.
patent: 4789648 (1988-12-01), Chow et al.
S. Wolf et al., Silicon Processing for the VLSI Era, vol. 1, Lattice Press Sunset Beach, 1986, pp. 399-404.
T. Ohba et al., Materials Research Society, 1987, "Evaluation On Selective Deposition of CVD W Films By Measurement of Surface Temperature", Kawasaki Japan.
T. Ohba et al., IEEE, 1987, pp. 213-216, "Selective CVD Tungsten Silicide For VLSI Applications", Kawasaki, Japan.

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