Method of making semiconductor memory elements

Details Method of making semiconductor memory elements Method of making semiconductor memory elements

1992-09-14

1993-07-27

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437919, H01L 2170

Patent

active

052310442

ABSTRACT:
A method of making a semiconductor memory element such as in dynamic random access memories including forming a transistor on a semiconductor substrate, forming a polysilicon film, a metal silicide film and an oxide film, in this order, over the resultant entire exposed surface so as to form a bit line at the bit line contact, forming another oxide film over the resultant entire exposed surface and forming side wall spacers and a capacitor contact, depositing a first doped polysilicon film over the resultant entire exposed surface, and forming a first smoothing oxide film over the first doped polysilicon film. Over the resultant entire exposed surface, a nitride film is formed which has a thickness larger than that of the first doped polysilicon film by two times or more. A second smoothing oxide film is formed over the nitride film. The nitride film is etched using the smoothing oxide films as a mask. The method also includes depositing a second polysilicon film for a storage node and a third oxide film over the resultant entire exposed surface, etching the second doped polysilicon film using the first, second and third smoothing oxide films as a mask, forming a storage node, and forming a dielectric film for a capacitor and a plate node.

REFERENCES:
patent: 5061650 (1991-10-01), Dennison et al.
patent: 5084405 (1992-01-01), Fazan et al.
patent: 5155057 (1992-10-01), Dennison et al.
N. Shinmura, et al., A Stacked Capacitor Cell with Ring Structure, Extended Abstracts of the 22nd (1990 International) Conference on Solid State Devices and Materials, Sendai, 1990, pp. 833-836.

Affiliated with

Also associated with

Rating

Method of making semiconductor memory elements does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making semiconductor memory elements, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making semiconductor memory elements will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2342007