Method of making a field effect transistor

Details Method of making a field effect transistor Method of making a field effect transistor

1992-01-23

1993-07-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 44, 437912, 437944, 437978, 148DIG1, H01L 21205

Patent

active

052310400

ABSTRACT:
A semiconductor device constituting a high electron mobility transistor or metal semiconductor field effect transistor includes an n.sup.+ type InGaAs layer at an upper surface of the device, a source and a drain electrode on the n.sup.+ type InGaAs layer, as non-alloying ohmic contacts, a gate electrode produced of the same metal as the source and drain electrodes, and the gate electrode and the source and drain electrodes are self-aligningly positioned and separated from each other by L-shaped insulating films.

REFERENCES:
patent: D281441 (1990-03-01), Kasai
patent: D370428 (1990-05-01), Europe
patent: 4359816 (1982-11-01), Abbas et al.
patent: 4472872 (1984-09-01), Toyodo et al.
patent: 4735913 (1988-04-01), Hayes
patent: 4774555 (1988-09-01), Kohn et al.
patent: 4916498 (1990-04-01), Berenz

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