Method of making a power VFET device using a p+ carbon doped gat

Details Method of making a power VFET device using a p+ carbon doped gat Method of making a power VFET device using a p+ carbon doped gat

1992-04-30

1993-07-27

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437176, 437179, 148DIG40, H01L 2144

Patent

active

052310370

ABSTRACT:
This is a method of forming a vertical transistor device. The method comprises: forming a n-type source layer 12; forming a p+ carbon doped gate layer 14; forming a gate structure from the gate layer; and forming a n-type drain layer 16 over the gate structure to provide a buried carbon doped gate structure. The buried carbon doped gate structure provides a very small device with favorable on-resistance, junction capacitance, gate resistance, and gate driving voltage. Other devices and methods are also disclosed.

REFERENCES:
patent: 4129879 (1978-12-01), Tantraporn et al.
patent: 4632710 (1986-12-01), Van Rees
patent: 5045502 (1991-09-01), Lau et al.
patent: 5077231 (1991-12-01), Plumton et al.
patent: 5116455 (1992-05-01), Daly
P. M. Campbell et al., "150 Volt Vertical Channel GaAs FET", IEDM, pp. 258-260, 1982.
P. M. Campbell et al., "Trapezoidal-Groove Schottky-Gate Vertical-Channel GaAs FET (GaAs Static Induction Transistor)", IEEE Electron Device Letters, pp. 304-306, vol. EDL-6, No. 6, Jun. 1985.
Mutsu052307154 hiro Mori, et al., "A High Voltage GaAs Power Static Induction Transistor", Extended Abstracts of the 19th Conference on Solid State Devices and Materials, pp. 279-282, Tokyo, 1987.
Wiliam R. Frensley, et al., "Design and Fabrication of a GaAs Vertical MESFET", IEEE Transactions on Electron Devices, pp. 952-956, vol. ED-32, No. 5, May 1985.

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