Ferroelectric capacitor including an iridium oxide layer in the

Details Ferroelectric capacitor including an iridium oxide layer in the Ferroelectric capacitor including an iridium oxide layer in the

1996-12-27

2000-04-18

Kincaid, Kristine

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

361311, 257295, H01G 4005, H01L 2976

Patent

active

060522712

ABSTRACT:
It is an object of the present invention to provide a ferroelectric capacitor which maintains high ferroelecticity. A silicon oxide layer 2, a lower electrode 12, a ferroelectric layer 8 and an upper electrode 10 are formed on a silicon substrate 2. The lower electrode 12 is formed by an alloy layer made of iridium and platinum. The alloy layer of the lower electrode 12 can be formed under appropriate lattice constant correspond with a kind and composition of the ferroelectric layer 8. So that, a ferroelectric layer having excellent ferroelectricity can be obtained. Also, it is possible to prevent vacancy of oxygen in the ferroelectric layer 8.

REFERENCES:
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5122923 (1992-06-01), Matsubara et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5240906 (1993-08-01), Bednorz et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5555486 (1996-09-01), Kingon et al.

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