1977-02-24
1978-10-24
Edlow, Martin H.
357 16, 357 61, H01L 3300
Patent
active
041224868
ABSTRACT:
A light emitting element made of a group III - V compound semiconductor has a p-n junction and a hetero-junction which are identical; the mixing ratio (band gap) of a p-type layer on the light emitting side is sufficiently smaller than that of an n-type layer on the opposite side. The semiconductor light-emitting element is especially useful as a light source, for optical communications, photoexcitation, etc.
REFERENCES:
patent: 4017881 (1977-04-01), Ono
Ito Kazuhiro
Kawata Masahiko
Kurata Kazuhiro
Mori Mitsuhiro
Morioka Makoto
Edlow Martin H.
Hitachi , Ltd.
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