Vertical complementary bipolar transistor device with epitaxial

Details Vertical complementary bipolar transistor device with epitaxial Vertical complementary bipolar transistor device with epitaxial

1977-08-05

1978-10-24

Miller, Jr., Stanley D.

357 44, 357 55, 357 56, H01L 2704

Patent

active

041224825

ABSTRACT:
A semiconductor device including a substrate of first conductivity type provided with an epitaxial region of the opposite conductivity type. The base of a first vertical bipolar transistor is formed by a localized epitaxial layer present above the first region, the collector of the transistor and the base of a second vertical bipolar transistor adjoining each other in the region.

REFERENCES:
patent: 3103599 (1963-09-01), Henkels
patent: 3423651 (1969-01-01), Legat et al.
patent: 3427515 (1969-02-01), Blicher et al.
patent: 3624454 (1971-11-01), Adkinson et al.
patent: 3868722 (1975-02-01), Le Can et al.
RCA Designers Handbook, 1972, pp. 576-579.

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