Semiconductor IC structure including isolated devices in a singl

Details Semiconductor IC structure including isolated devices in a singl Semiconductor IC structure including isolated devices in a singl

1977-06-22

1978-10-24

Edlow, Martin H.

357 42, 357 44, 357 46, 357 48, H01L 2702

Patent

active

041224817

ABSTRACT:
A semiconductor IC structure including a plurality of isolated devices in a single substrate of a first conductivity type comprising at least three wells of a second conductivity type formed in the substrate, two of the wells reaching different edges of a buried layer of the second conductivity type at the bottom of the substrate to define a first zone of the first conductivity type in the substrate and the other wells defining at least one second zone of the first conductivity type in the substrate, and a method of fabricating a semiconductor IC structure of the above-mentioned type.

REFERENCES:
patent: 3838440 (1974-09-01), McCoffrey
patent: 4016596 (1977-04-01), Mazdo
patent: 4032372 (1977-06-01), Vora
patent: 4032962 (1977-06-01), Balyoz
patent: 4076556 (1978-02-01), Agroz-Guerena

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